schottky barrier diode rsx101m-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small power mold type. (pmdu) 2)low v f , low i r 3)high reliability ? construction silicon epitaxial ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit forward voltage v f - 0.35 0.39 v i f =1a reverse current i r - 90 200 av r =30v capacitance between terminals ct - 60.0 - pf v r =10v , f=1mhz esd breakdown voltage esd - 12.0 - kv c=200pf ,r=0 ? conditions storage temperature ? 40 to ? 150 (*1)mounting on epoxi board. 180half sine wave parameter forward current surge peak (60hz ? 1cyc) 45 junction temperature 150 reverse voltage (dc) 30 average rectified forward current 1 parameter limits reverse voltage (repetitive) 30 pmdu 1.2 3.05 0.85 4.00.1 2.00.05 1.550.05 1.810.1 4.00.1 1.00.1 3.50.05 1.750.1 8.00.2 0.250.05 1.5max 3.710.1 rohm : pmdu jedec :sod-123 manufacture date 0.90.1 1.60.1 2.60.1 3.50.2 0.80.1 0.10.1 0.05 1/3 2011.05 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rsx101m-30 0 50 100 150 200 ave:66.0a 0 5 10 15 20 25 30 ave:8.30ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 0 100 200 300 400 500 ta=-25 ta=125 ta=75 ta=25 ta=150 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 ta=125 ta=75 ta=25 ta=-25 ta=150 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 330 340 350 360 370 380 ave:349.9mv ta=25 if=1a n=30pcs 0 100 200 300 400 500 600 700 800 900 1000 ta=25 vr=30v n=30pcs ave:103.1ua 250 260 270 280 290 300 310 320 330 340 350 ave:300.1pf ta=25 f=1mhz vr=0v n=10pcs 0 10 20 30 40 50 60 70 80 90 100 11 01 0 0 8.3ms ifsm 1cyc 8.3ms 0 10 20 30 40 50 60 70 80 90 100 1 10 100 t ifsm 0 0.2 0.4 0.6 0.8 1 00.511.52 dc d=1/2 sin(?180) 8.3ms ifsm 1cyc 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) mounted on epoxy board 1ms im=10ma if=0.5a 300us time 2/3 2011.05 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsx101m-30 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.5 1 1.5 2 01 02 03 0 sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 sin(?180) dc d=1/2 t tj=150 d=t/t t vr io vr=15v 0a 0v t tj=150 d=t/t t vr io vr=15v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:10.8kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.05 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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